(China (Mainland))
Product Summary
The SI4804BDY-T1-E3 is a dual N-channel, 30V (D-S) mosfet. The package of the SI4804BDY-T1-E3 is SOIC-8.
Parametrics
SI4804BDY-T1-E3 absolute maximum ratings: (1) Drain-Source Voltage: 30V; (2) Gate-Source Voltage: ±20A; (3) Continuous Drain Current: 6A; (4) Pulsed Drain Current: 30A; (5) Continuous Source Current (MOSFET Diode Conduction) : 2.3A; (6) Power Dissipation: 1.7A; (7) Operating Junction and Storage Temperature Range: -55 to 150°C (8) Maximum Junction-to-Ambient: 62.5°C/W.
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 SI4804BDY-T1-E3 |
Vishay/Siliconix |
MOSFET 30V 7.5A 2W |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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Si4800 |
Other |
|
Data Sheet |
Negotiable |
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 |
SI4800,518 |
|
MOSFET N-CH 30V 9A SOT96-1 |
Data Sheet |
Negotiable |
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|
SI4800BDY-T1-E3 |
Vishay/Siliconix |
MOSFET 30V 9A 2.5W |
Data Sheet |
|
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|
SI4800BDY-T1-GE3 |
Vishay/Siliconix |
MOSFET 30V 9.0A 2.5W 18.5mohm @ 10V |
Data Sheet |
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|
SI4800DY |
Vishay/Siliconix |
MOSFET 30V 9A 2.5W |
Data Sheet |
Negotiable |
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|
SI4800DY-E3 |
Vishay/Siliconix |
MOSFET 30V 9A 2.5W |
Data Sheet |
Negotiable |
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