(China (Mainland))
Product Summary
The IXFH40N30 is an N-Channel Enhancement Mode, Power MOSFET. Application areas of the IXFH40N30 include DC-DC converters, Synchronous rectification, Battery chargers, Switched-mode and resonant-mode power supplies, DC choppers, AC motor control, Temperature and lighting controls, Low voltage relays.
Parametrics
IXFH40N30 absolute maximum ratings: (1)VDSS: TJ = 25°C to 150°C 300 V; (2)VDGR: TJ = 25°C to 150°C; RGS = 1 MΩ 300V; (3)VGS: Continuous ±20 V; (4)VGSM: Transient ±30 V; (5)ID25 TC = 25°C 35N30 35A; (6)IDM TC = 25°C, pulse width limited by TJM 35N30 140A; (7)EAR TC = 25°C 30mJ.
Features
IXFH40N30 features: (1)International standard packages; (2)Low RDS HDMOSTM process; (3)Rugged polysilicon gate cell structure; (4)Unclamped Inductive Switching (UIS) rated; (5)Low package inductance- easy to drive and to protect; (6)Fast intrinsic Rectifier.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 IXFH40N30 |
Ixys |
MOSFET 300V 40A |
Data Sheet |
Negotiable |
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|
IXFH40N30Q |
Ixys |
MOSFET 300V 40A |
Data Sheet |
Negotiable |
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