Product Summary

The HY57V561620C(L)T(P) Series is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C(L)T(P) Series is organized as 4banks of 4,194,304x16.
Programmable options include the length of pipeline (Read latency of 2 or 3), the number of consecutive read or write cycles initiated by a single control command (Burst length of 1,2,4,8 or full page), and the burst count sequence(sequential or interleave). A burst of read or write cycles in progress can be terminated by a burst terminate command or can be interrupted and replaced by a new burst read or write command on any cycle. (This pipelined design is not restricted by a `2N` rule.
HY57V561620C(L)T(P) Series is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input and output voltage levels are compatible with LVTTL.

Parametrics

1.All voltages are referenced to VSS = 0V
2.VIH (max) is acceptable 5.6V AC pulse width with ns of duration
3.VIL (min) is acceptable -2.0V AC pulse width with ns of duratio

Features

1 Single 3.3 0.3V power supply
2 All device pins are compatible with LVTTL interface
3 JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch (Leaded Package or Lead Free Package)
4 All inputs and outputs referenced to positive edge of system clock
5 Data mask function by UDQM, LDQM
6 Internal four banks operation
7 Auto refresh and self refresh
8 8192 refresh cycles / 64ms
9 Programmable Burst Length and Burst Type
- 1, 2, 4, 8 or Full page for Sequential Burst
- 1, 2, 4 or 8 for Interleave Burst
10 Programmable CAS Latency , 2,3 Clock

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HY57V561620CT-H
HY57V561620CT-H

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HY57V121620(L)T
HY57V121620(L)T

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HY57V161610D
HY57V161610D

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HY57V161610D-I
HY57V161610D-I

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HY57V161610E
HY57V161610E

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HY57V161610ET-I
HY57V161610ET-I

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HY57V161610ETP-I
HY57V161610ETP-I

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