(China (Mainland))
Product Summary
The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This HGTG30N60A4 has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The HGTG30N60A4D used is the development type TA49343. The diode used in anti-parallel is the development type TA49373. ThisHGTG30N60A4D has been optimized for high frequency switch mode power supplies.Formerly Developmental Type TA49345.
Parametrics
HGTG30N60A4D absolute maximum ratings TC=25°C, Unless Otherwise Specifie: (1( Collector to Emitter Voltage BVCES: 600V; (2) Collector Current Continuous At TC = 25°C, IC25: 75A; (3) Collector Current Continuous At TC = 110°C, IC110: 60 A; (4) Collector Current Pulsed (Note 1) , ICM: 240 A; (5) Gate to Emitter Voltage Continuous, VGES: ±20 V; (6) Gate to Emitter Voltage Pulsed, VGEM: ±30 V; (7) Switching Safe Operating Area at TJ= 150℃ (Figure 2) ,SSOA: 150A at 600V; (8) Power Dissipation Total at TC = 25°C, PD: 463W; (9) Power Dissipation Derating TC > 25°C, 3.7 W/°C; (10) Operating and Storage Junction Temperature RangeTJ, TSTG: -55 to 150°C; (11) Maximum Temperature for Soldering,TL: 260°C.
Features
HGTG30N60A4D features: (1) 100kHz Operation At 390V, 30A; (2) 200kHz Operation At 390V, 18A; (3) 600V Switching SOA Capability; (4) Typical Fall Time 60ns at TJ=125℃; (5) Low Conduction Loss; (6) Temperature Compensating SABER Model.
Diagrams
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 HGTG30N60A4D |
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