Product Summary

The FQPF12N60C is an N-channel mosfet. The FQPF12N60C is produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology of the FQPF12N60C has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQPF12N60C is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Parametrics

FQPF12N60C absolute maximum ratings: (1) VDSS Drain-Source Voltage : 600 V; (2) IDM Drain Current-Pulsed: 48A; (3) VGSS Gate-Source Voltage: ± 30V; (4) EAS Single Pulsed Avalanche Energy: 870mJ; (5) IAR Avalanche Current: 12A; (6) EAR Repetitive Avalanche Energy: 22.5mJ; (7) dv/dt Peak Diode Recovery dv/dt: 4.5V/ns; (8) PD Power Dissipation (TC=25°C) : 22551W; (9) Derate above 25°C 1.78 0.41 W/°C; (10) TJ, TSTG Operating and Storage Temperature Range: -55 to +150 °C; (11) TL Maximum lead temperature for soldering purposes, 1/8 inch from case for 5 seconds: 300°C.

Features

FQPF12N60C features:(1) 12A, 600V, RDS (on)= 0.65Ω @VGS = 10 V; (2) Low gate charge ( typical 48nC) ; (3) Low Crss ( typical 21pF); (4) Fast switching; (5) 100% avalanche tested; (6) Improved dv/dt capability.

Diagrams

FQPF12N60C Circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FQPF12N60C
FQPF12N60C
Fairchild Semiconductor
MOSFET 600V N-Ch Q-FET advance C-Series
Data Sheet
Negotiable 
FQPF12N60CT
FQPF12N60CT
Fairchild Semiconductor
MOSFET N-CH/600V/12A QFET C-Series
Data Sheet
Negotiable